硕士生导师 性别：男
所属单位：机械工程学院 论文名称：Semi-polar (11–22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing ISSN号：00220248 是否译文：否
上一条：Spatial distribution of optical intensity of overgrown semi-polar (20-21) InGaN/GaN multiple quantum wells dominated by surface morphology
下一条：Semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent
