江苏大学主页平台管理系统张韵--中文主页-- Semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent

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Semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent

发布时间：2024-08-05 点击次数：

所属单位：机械工程学院
论文名称：Semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent
ISSN号：1882-0778
是否译文：否

上一条：Semi-polar (11–22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing

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论文成果

Semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent