江苏大学主页平台管理系统吕全江--中文主页--论文成果

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吕全江

性别：男
学历：博士研究生毕业
学位：博士
所在单位：材料科学与工程学院
入职时间： 2020-08-01

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论文成果

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[1] 吕全江.Effect of oxide layer state on the photoelectric properties of thermally sensitized PbS thin films
[2] 吕全江.Efficient and stable self-powered PbSe photodetectors via doping-induced asymmetric Cr electrodes mo
[3] 吕全江.Liquid iodine sensitization for enhanced mid-infrared detection of lead selenide films
[4] 吕全江.Effect of oxygen and nitrogen sensitization on structural, optical and electrical properties of PbSe
[5] 吕全江.Influence of the thickness of p-GaN ohmic contact layer on the performance of AlGaN-based deep-ultra
[6] 吕全江.Fabrication, microstructures and optical reflectivity of TiAlN/NiCr composite coating
[7] 吕全江.Colloidal etching of deep ultraviolet LED with improved light extraction efficiency
[8] 吕全江.Ultrafine nickel-rhodium nanoparticles anchored on two-dimensional vanadium carbide for high perform
[9] 吕全江.Influence of period number of superlattice electron barrier layer on the performance of AlGaN-based
[10] 吕全江.超晶格电子阻挡层周期数对AlGaN基深紫外发光二极管性能的影响
[11] 吕全江.Steady-state photoluminescence studies of TFA-CsPbBr3: Zn perovskite quantum dots
[12] 吕全江.Quasi-one-dimensional phosphorene nanoribbons grown on silicon by space-confined chemical vapor tran
[13] 吕全江.CeO2 nanorods decorated In2O3 nanoparticles for enhanced low temperature detection of hydrogen
[14] 吕全江.In situ grown large-size highly crystalline black phosphorus thin film for self-driven photodetector
[15] 吕全江.Effects of the high-temperature sensitization in argon atmosphere on the microstructure and properti
[16] 吕全江.Enhancement of the photoelectric properties of PbSe films via iodine sensitization in an oxygen-free
[17] 吕全江.Performance Improvement of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with Multigradient Ele
[18] 吕全江.Improved hole injection and carrier distribution in AlGaN deep-ultraviolet light-emitting diodes wit
[19] 吕全江.Realization of high-efficiency AlGaN deep ultraviolet light-emitting diodes with polarization-induce
[20] 吕全江.Effect of EBL thickness on the performance of AlGaN deep ultraviolet light-emitting diodes with pola

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