吕全江
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所属单位:智能农机装备理论与技术重点实验室
ISSN号:1674-1056
是否译文:否
上一条:Improved hole injection and carrier distribution in AlGaN deep-ultraviolet light-emitting diodes with bidirectional-staircase-barrier structure
下一条:Effect of EBL thickness on the performance of AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping hole injection layer