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[1] Enhancement of the photoelectric properties of PbSe films via iodine sensitization in an oxygen-free atmosphere
[2] Performance Improvement of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with Multigradient Electron Blocking Layer and Triangular Last Quantum Barrier
[3] Improved hole injection and carrier distribution in AlGaN deep-ultraviolet light-emitting diodes with bidirectional-staircase-barrier structure
[4] Realization of high-efficiency AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping of the p-AlGaN hole injection layer
[5] Effect of EBL thickness on the performance of AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping hole injection layer
[6] High Detectivity of PbS Films Deposited on Quartz Substrates: The Role of Enhanced Photogenerated Carrier Separation
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