江苏大学主页平台管理系统 lvquanjiang--Home-- Improved hole injection and carrier distribution in AlGaN deep-ultraviolet light-emitting diodes with bidirectional-staircase-barrier structure

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吕全江

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Improved hole injection and carrier distribution in AlGaN deep-ultraviolet light-emitting diodes with bidirectional-staircase-barrier structure

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Affiliation of Author(s):33000

Journal:Journal of Luminescence

ISSN No.:00222313

Translation or Not:no

Pre One:Performance Improvement of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with Multigradient Electron Blocking Layer and Triangular Last Quantum Barrier

Next One:Realization of high-efficiency AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping of the p-AlGaN hole injection layer