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Semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent

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Affiliation of Author(s):机械工程学院
ISSN No.:1882-0778
Translation or Not:no

Pre One:Semi-polar (11–22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing

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