Ferroelectric polarization-driven ionic modulation enabling enhanced self-rectification in NiOx/HfO2-x: Al memristors
发布时间:2025-01-13 点击次数:
所属单位:43300
发表刊物:APPLIED PHYSICS LETTERS
ISSN号:0003-6951
是否译文:否
所属单位:43300
发表刊物:APPLIED PHYSICS LETTERS
ISSN号:0003-6951
是否译文:否