江苏大学主页平台管理系统杨建--中文主页-- Dual-Site Doping and Low-Angle Grain Boundaries Lead to High Thermoelectric Performance in N-Type Bi2S3

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Dual-Site Doping and Low-Angle Grain Boundaries Lead to High Thermoelectric Performance in N-Type Bi2S3

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所属单位：40400

发表刊物：ADVANCED FUNCTIONAL MATERIALS

ISSN号：1616-301X

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