Language : English
王云龙

Patents

一种TiO2半导体光阳极的微弧氧化制备方法

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Type of Patent:发明

State of Patent:已授权

Authorization number:201510182840.9

Service Invention or Not:no

Application Date:2015-04-17

Authorization Date:2017-07-18

Application Date:2015-04-17

Authorization Date:2017-07-18