Type of Patent:发明
State of Patent:已授权
Authorization number:201210052272.7
Service Invention or Not:no
Application Date:2012-03-02
Authorization Date:2015-03-04
Pre One:一种利用超短脉冲激光制备硅基表面陷光结构的方法
Next One:一种嵌入型金属/透明导电薄膜的制备方法
The Last Update Time:..